Low-threshold, highly stable colloidal quantum dot short-wave infrared laser enabled by suppression of trap-assisted Auger recombination
Nima Taghipour, Guy L. Whitworth, Andreas Othonos, Mariona Dalmases,, Santanu Pradhan, Yongjie Wang, Gaurav Kumar, Gerasimos Konstantatos

TL;DR
This paper demonstrates a method to suppress trap-assisted Auger recombination in colloidal quantum dot lasers, enabling low-threshold, stable, single-mode infrared lasing with prolonged operation at room temperature.
Contribution
The study introduces a binary blend of CQDs and ZnO nanocrystals to passivate trap states, significantly reducing Auger recombination and achieving stable, low-threshold IR laser emission.
Findings
Five-fold increase in Auger lifetime
Two-fold reduction in ASE threshold
5 hours of continuous stable operation
Abstract
Pb-chalcogenide colloidal quantum dots (CQDs) are attractive materials to be used as tuneable laser media across the infrared spectrum. However, excessive nonradiative Auger recombination due to the presence of trap states outcompetes light amplification by rapidly annihilating the exciton population, leading to high gain thresholds. Here, we employ a binary blend of CQDs and ZnO nanocrystals in order to passivate the in-gap trap states of PbS-CQD gain medium. Using transient absorption, we measure a five-fold increase in Auger lifetime demonstrating the suppression of trap-assisted Auger recombination. By doing so, we achieve a two-fold reduction in amplified spontaneous emission (ASE) threshold. Finally, by integrating our proposed binary blend to a DFB resonator, we demonstrate single-mode lasing emission at 1650 nm with a linewidth of 1.23 nm (0.62 meV), operating at a low lasing…
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Taxonomy
TopicsQuantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
