Electrical Programmable Multi-Level Non-volatile Photonic Random-Access Memory
Jiawei Meng, Yaliang Gui, Behrouz Movahhed Nouri, Gelu Comanescu,, Xiaoxuan Ma, Yifei Zhang, Cosmin-Constantin Popescu, Myungkoo Kang, Mario, Miscuglio, Nicola Peserico, Kathleen A. Richardson, Juejun Hu, Hamed Dalir,, Volker J. Sorger

TL;DR
This paper introduces a low-loss, electrically-programmable multi-level non-volatile photonic memory using broadband transparent phase change material, achieving high efficiency, low power, and robust performance suitable for advanced photonic computing applications.
Contribution
It demonstrates a novel broadband transparent phase change material-based photonic memory with ultra-low loss, multi-bit capability, and high cyclability on a silicon platform, advancing photonic memory technology.
Findings
Achieved 0.12 dB total insertion loss for 4-bit memory
Demonstrated 0.2 dB/μm amplitude modulation
Validated robustness with half-a-million cyclability tests
Abstract
Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multi-state electrically-programmed low-loss non-volatile photonic memory based on a broadband transparent phase change material (Ge2Sb2Se5, GSSe) with ultra-low absorption in the amorphous state. A zero-static-power and electrically-programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/{\mu}m and an ultra-low insertion loss of total 0.12 dB for a 4-bit memory…
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Taxonomy
TopicsNeural Networks and Reservoir Computing · Photonic and Optical Devices · Optical Network Technologies
