Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics

TL;DR

This paper demonstrates the hybrid integration of quantum dot single-photon sources with wafer-scale silicon carbide photonics, enabling efficient photon routing and on-chip beamsplitter operation, advancing scalable quantum photonic circuits.

Contribution

It introduces a novel hybrid integration method of quantum dots with 4H-SiC photonics using ion slicing, achieving efficient single-photon routing and on-chip beamsplitting.

Findings

Successful integration of quantum dots with 4H-SiC photonics.

Efficient routing of single photons in the hybrid chip.

Implementation of on-chip beamsplitter operation.

Abstract

Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here we demonstrate hybrid integration of self-assembled InGaAs quantum dots (QDs) based single-photon sources (SPSs) with wafer-scale 4H-SiC photonic chips prepared by ion slicing technique. By designing a bilayer vertical coupler, we realize generation and highly efficient routing of single-photon emission in the hybrid quantum photonic chip. Furthermore, we realize a chip-integrated beamsplitter operation for triggered single photons through fabricating a 1x2 multi-mode interferometer (MMI) with a symmetric power splitting ratio of 50:50. The successful demonstration of heterogeneously integrating QDs-based SPSs on 4H-SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS-compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs.