High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K

TL;DR

This study investigates the magnetoresistance and magnetization of microcrystalline and nanocrystalline nickel at 3 K and 300 K, revealing how microstructure influences MR behavior and anisotropic magnetoresistance.

Contribution

It provides a comparative analysis of MR in microcrystalline and nanocrystalline Ni, highlighting the effects of electron mean free path and temperature on MR saturation and anisotropic properties.

Findings

MR saturates in microcrystalline Ni at 3 K, non-saturating in nanocrystalline Ni.

At 300 K, MR behavior resembles bulk Ni with linear decrease in resistivity after saturation.

AMR ratio remains relatively constant across temperatures for both microstructures.

Abstract

The magnetoresistance (MR) and the magnetization isotherms were studied up to high magnetic fields at T = 3 K and 300 K for a microcrystalline ($\mu$c) Ni foil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil. At T = 3 K, for the $\mu$c-Ni sample with a residual resistivity ratio (RRR) of 331, the field dependence of the resistivity was similar to what was reported previously for high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni sample with RRR = 9 resembled that what was observed at low temperatures for Ni-based alloys with low impurity concentration. In the magnetically saturated state, the resistivity increased with magnetic field for both samples at T = 3 K and the field dependence was dominated by the ordinary MR due to the Lorentz force acting on the electron trajectories. However, the MR(H) curves were found to be saturating for $\mu$c-Ni and non-saturating for nc-Ni, the difference arising from their very different electron mean free paths. At T = 300 K, the MR(H) curves of both Ni samples were very similar to those known for bulk Ni. After magnetic saturation, the resistivity decreased nearly linearly with magnetic field which behavior is due to the suppression of thermally-induced magnetic disorder with increasing magnetic field. The MR(H) data were analyzed at both temperatures with the help of Kohler plots from which the resistivity anisotropy splitting ($\Delta\rho_{AMR}$) and the anisotropic magnetoresistance (AMR) ratio were derived. It was demonstrated that at T = 300 K, $\rho(H\rightarrow 0)=\rho(B\rightarrow 0)$ due to the negligible contribution of the ordinary MR. The data for the two Ni samples at 3 K and 300 K were found to indicate an approximately linear scaling of $\Delta\rho_{AMR}$ with the zero-field resistivity. This implies that the AMR ratio does not vary significantly with temperature in either microstructural state of Ni.