Lithography Free Process for the Fabrication of Periodic Silicon Micro/Nano-Wire Arrays and Its Light-trapping Properties
Divya Rani, Anil Kumar, Anjali Sain, Deepika Singh, Neeraj Joshi, Ravi, Kumar Varma, Mrinal Dutta, Arup Samanta

TL;DR
This paper presents a novel lithography-free method combining MACE and RIE to fabricate silicon micro/nanowire arrays with controlled sizes, enhancing light-trapping and charge collection for solar cell applications.
Contribution
It introduces a new lithography-free process for creating silicon micro/nanowire arrays with tunable dimensions and demonstrates their superior light-trapping properties.
Findings
Average reflectance as low as 0.22% at 45° incident angle.
Micro/nanowire arrays significantly reduce reflectance compared to planar silicon.
Arrays are promising for low-cost, high-efficiency solar cells.
Abstract
Vertically aligned silicon micro/nanowire arrays of different sizes have been synthesized by combining the modified metal-assisted chemical etching (MACE) and reactive ion etching (RIE) methods. This is a novel lithography-free method to fabricate silicon micro/nanowire arrays. The size of micro/nanowire arrays is controlled by controlling the etching rate and diameter of silica particles. The silicon micro/nanowire geometry can utilize for efficient collection of photo-generated charge carriers from impure silicon wafers, which have a short minority carrier diffusion length also act as a self-antireflection coating layer. For micro/nanowire having average diameters of 40 nm, 330 nm and 950 nm and their corresponding average length 1.12 micron, 1.1 micron, and 1 micron, respectively, the observed average reflectance was 0.22, 0.6 and 0.33 percent at 45-degree incident angle, while the…
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Taxonomy
TopicsNanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Thin-Film Transistor Technologies
