Halogenation induced transition of superconductor-to-semiconductor in MXene-like MOene with direct band gap and long carrier lifetime

TL;DR

This paper explores how halogenation can induce a transition from superconducting to semiconducting behavior in MXene-like materials, revealing new semiconductors with direct band gaps and long carrier lifetimes.

Contribution

It introduces halogenation as a method to transform MXene-like materials into semiconductors with direct band gaps, expanding the MXene family beyond carbides and nitrides.

Findings

Halogenation induces superconductor-to-semiconductor transition.

Discovery of MXene-like materials with direct band gaps.

Materials exhibit long carrier lifetimes.

Abstract

Traditional MXenes with intriguing mechanical and electronic properties, together with the fertilities of elemental compositions and chemical decorations have aroused much attentions. However, the semiconducting traits with direc band gap are extremetely rare among reported MXenes. Thus, broadening the family of MXene beyond carbides and nitrides with unique behaviors is still an extraordinary and fascinating field.