Correlative nanoscale imaging of strained hBN spin defects

TL;DR

This study uses correlative microscopy to investigate how strain from creases in hBN affects spin defects, revealing localized luminescence changes and defect migration, which could enable precise quantum sensing in 2D materials.

Contribution

It demonstrates the effect of localized strain on hBN spin defects using combined microscopy and theoretical modeling, advancing quantum sensor development.

Findings

Localized luminescence enhancement and redshift at creases.

Migration of $V_B^-$ defects toward regions of compressive strain.

Potential for strain-based manipulation of quantum defects.

Abstract

Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.