Effects of external pressure on the narrow gap semiconductor Ce$_{3}$Cd$_{2}$As$_{6}$
M. M. Piva, L. Xiang, J. D. Thompson, S. L. Bud'ko, R. A. Ribeiro, P., C. Canfield, P. F. S. Rosa

TL;DR
This study investigates how external pressure affects the electronic and magnetic properties of Ce$_{3}$Cd$_{2}$As$_{6}$, revealing suppression of charge density waves and enhancement of antiferromagnetic order, with potential multiple magnetic phases under pressure.
Contribution
It provides the first detailed analysis of pressure effects on Ce$_{3}$Cd$_{2}$As$_{6}$, showing suppression of charge density waves and pressure-induced changes in magnetic phases.
Findings
Charge density wave order is suppressed above 0.8 GPa.
Antiferromagnetic transition temperature increases with pressure.
No superconductivity observed above 2 K.
Abstract
Here we report the magnetic and electronic properties of recently discovered CeCdAs. At ambient pressure, CeCdAs presents a semiconducting behavior with an activation gap of 74(1)~meV. At 136~K, a sudden increase of the electrical resistivity and a peak in specific heat are consistent with a charge density wave transition. At low temperatures, antiferromagnetic order of the Ce ions occurs below ~K with a magnetic hard axis along the -axis and a doublet ground state. The application of external pressure strongly suppresses the charge density wave order, which is completely suppressed above 0.8(1)~GPa, and induces a metallic ground state. No evidence for superconductivity is detected above 2~K. Conversely, the antiferromagnetic state is favored by pressure, reaching a transition temperature of…
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Taxonomy
TopicsRare-earth and actinide compounds · Iron-based superconductors research · Magnetic and transport properties of perovskites and related materials
