$q$th-root non-Hermitian Floquet topological insulators
Longwen Zhou, Raditya Weda Bomantara, and Shenlin Wu

TL;DR
This paper introduces a method to generate fractional quasienergy topological insulators by taking the $q$th-root of Floquet evolution operators, revealing controllable edge and corner modes in non-Hermitian Floquet systems.
Contribution
It presents a novel $q$th-root procedure for Floquet operators, enabling the construction of fractional quasienergy topological phases in non-Hermitian Floquet insulators.
Findings
Multiple fractional quasienergy edge and corner modes identified.
Non-Hermiticity induces fractional-quasienergy corner modes.
Coexistence of non-Hermitian skin effect with fractional quasienergy states.
Abstract
Floquet phases of matter have attracted great attention due to their dynamical and topological nature that are unique to nonequilibrium settings. In this work, we introduce a generic way of taking any integer th-root of the evolution operator that describes Floquet topological matter. We further apply our th-rooting procedure to obtain th- and th-root first- and second-order non-Hermitian Floquet topological insulators (FTIs). There, we explicitly demonstrate the presence of multiple edge and corner modes at fractional quasienergies and , whose numbers are highly controllable and capturable by the topological invariants of their parent systems. Notably, we observe non-Hermiticity induced fractional-quasienergy corner modes and the coexistence of non-Hermitian skin effect with fractional-quasienergy edge…
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