Mapping Conductance and Switching Behavior of Graphene Devices In Situ

TL;DR

This paper demonstrates a novel imaging technique, SEEBIC, for visualizing conductance and charge transport in graphene nanodevices at the nanoscale, enabling insights into quantum and electronic behaviors.

Contribution

It introduces a new SEEBIC imaging platform compatible with electron microscopy for in situ analysis of graphene devices, revealing conductance and dynamic electronic processes.

Findings

SEEBIC can visualize conductance in graphene nanodevices.

The technique detects subtle charge transport differences over time.

It enables in situ imaging under conditions where traditional methods fail.

Abstract

Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we present proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC). We introduce a device platform compatible with scanning transmission electron microscopy investigations. We then show how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails). Finally, we show that the SEEBIC imaging technique can detect subtle differences in charge transport through time in non-ohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.