Complex Analytic Dependence on the Dielectric Permittivity in ENZ Materials: The Photonic Doping Example
Robert V. Kohn, Raghavendra Venkatraman

TL;DR
This paper analyzes how the electromagnetic scattering in epsilon-near-zero materials is affected by a dopant, revealing that the solution depends analytically on the permittivity parameter and explaining the robustness of photonic doping effects.
Contribution
It provides a PDE-based analysis of the analytic dependence of electromagnetic fields on dielectric permittivity in ENZ materials, including a characterization of the electric field in the zero-permittivity limit.
Findings
Solution depends analytically on permittivity parameter near zero
Leading-order corrections explain robustness of photonic doping
Includes PDE characterization of electric field in ENZ region
Abstract
Motivated by the physics literature on "photonic doping" of scatterers made from "epsilon-near-zero" (ENZ) matrials, we consider how the scattering of time-harmonic TM electromagnetic waves by a cylindrical ENZ region is affected by the presence of a "dopant" in which the dielectric permittivity is not near zero. Mathematically, this reduces to analysis of a 2D Helmholtz equation with a piecewise-constant, complex valued coefficient that is nearly infinite (say with ) in We show (under suitable hypotheses) that the solution depends analytically on near , and we give a simple PDE characterization of the terms in its Taylor expansion. For the application to photonic doping, it is the leading-order corrections in…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsNonlinear Photonic Systems · Quantum optics and atomic interactions · Electromagnetic Simulation and Numerical Methods
