Compositional dependence of direct transition energies in Si$_x$Ge$_{1-x-y}$Sn$_y$ alloys lattice-matched to Ge/GaAs
Phoebe M. Pearce, Sheau Wei Ong, Andrew D. Johnson, Eng Soon Tok,, Nicholas J. Ekins-Daukes

TL;DR
This study investigates the direct transition energies and structural properties of Ge-rich SiGeSn alloys with varying compositions, demonstrating potential for 1 eV absorption edges suitable for optoelectronic applications.
Contribution
It provides detailed spectroscopic and structural analysis of SiGeSn alloys with low Si and Sn content, expanding understanding of their optical properties and lattice matching capabilities.
Findings
Achieved 1 eV direct absorption edge with low Si and Sn fractions
Confirmed good agreement between predicted and measured lattice constants
Observed smaller shifts in higher-energy critical points compared to Ge
Abstract
SiGeSn ternary alloys are a candidate material system for use in solar cells and other optoelectronic devices. We report on the direct transition energies and structural properties of Ge-rich SiGeSn alloys with six different compositions up to 10 % Si and 3 % Sn, lattice-matched to Ge or GaAs substrates. The direct transitions occurring between 0.9 and 5.0 eV were investigated using spectroscopic ellipsometry (SE), and the resulting data was used to obtain the dielectric functions of the SiGeSnn layer by fitting a multi-layer model. Values for the , , , and transition energies were then found by differentiating these dielectric functions to extract the locations of critical points. Structurally, the composition of the samples was measured using energy-dispersive X-ray measurements (EDX). The lattice…
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Taxonomy
TopicsPhotonic and Optical Devices · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies
