Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control
Pierre-Antoine Mouny, Yann Beilliard, S\'ebastien Graveline,, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Rapha\"el Dawant, Pierre Gliech,, Serge Ecoffey, Fabien Alibart, Michel Pioro-Ladri\`ere, and Dominique Drouin

TL;DR
This paper introduces a memristor-based programmable DC source operable at cryogenic temperatures, enabling in-situ quantum dot control and addressing wiring bottlenecks in scalable quantum computing systems.
Contribution
It presents the first demonstration of multilevel resistance programming of TiO2 memristors at 4.2 K and simulates a cryogenic DC source for quantum dot biasing.
Findings
Achieved 1 V voltage range with memristors at cryogenic temperatures.
Demonstrated in-situ charge stability diagram simulation for quantum dots.
Validated memristor performance with experimental data at 4.2 K.
Abstract
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryostat (i.e. in-situ). This novel cryogenic approach would enable to control the applied voltage on the electrostatic gates by programming the resistance of the memristors, thus storing in the latter the appropriate conditions to form the quantum dots. In this study, we first demonstrate multilevel resistance programming of a TiO2-based memristors at 4.2 K, an essential feature to achieve voltage tunability of the memristor-based DC source. We then report hardwarebased simulations of the…
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