A time-fractional dual-phase-lag framework to investigate transistors with TMTC channels (TiS3, In4Se3) and size-dependent properties

TL;DR

This paper introduces a fractional dual-phase-lag thermal model with temperature jump boundary conditions to analyze heat transfer in TMTC transistors, revealing size-dependent effects and potential for improved thermal management in nano-semiconductors.

Contribution

It develops a novel fractional dual-phase-lag model incorporating size-dependent thermal properties and temperature jumps for transistor thermal analysis.

Findings

Size-dependent thermal properties increase peak temperature rise by up to 250%.

Oscillations in peak temperature are observed with constant bulk properties, indicating negative bias temperature instability.

TiS3 transistors show the lowest hotspot temperature among studied materials, suggesting suitability as silicon replacements.

Abstract

In this study, a time fractional dual-phase-lag model with temperature jump boundary condition as a choice for the Fourier's law replacement in thermal modeling of transistors, is utilized. In more details, the numerical simulation of heat transfer in newly proposed TMTC field effect transistors using fractional DPL equation has been investigated. Moreover, the Caputo fractional derivative is employed to formulate the finite difference scheme for discretization of the fractional DPL model. In order to obtain more precise results for the peak temperature rise, the temperature and heat flux profiles, the size-dependent thermal properties are taken into account. Also, the temperature jump boundary condition has been also applied by means of a mixed-type boundary condition. It is obtained that considering size-dependent thermal characteristics for transistors under study, results in increase of the peak temperature rise up to 250 percent. Furthermore, considering constant bulk thermal properties for the silicon MOSFET, certain oscillations are observed in the time-variation of the peak temperature rise for alpha= 0.7, 0.9 and 1. This presents the so-called negative bias temperature instability appearing in electronic nano-semiconductor devices. Finally, the hotspot temperature has been researched in transistors containing two-dimensional materials with quasi one-dimensional band structure channels. It is obtained that among the studied FETs, titanium trisulfide with maximum temperature increase of 19.63 K exhibits the least peak temperature rise. This presents that TiS3 may be an acceptable silicon channel replacement as far as the thermal issues are concerned.