Large output voltage to magnetic flux change in nanoSQUIDs based on direct-write Focused Ion Beam Induced Deposition technique

TL;DR

This paper demonstrates the fabrication of nanoSQUIDs using a direct-write FIBID technique, achieving high transfer coefficients and potential for improved spatial resolution and integration in magnetic sensing applications.

Contribution

It introduces a novel FIBID-based method for rapid fabrication of nanoSQUIDs with high transfer coefficients and discusses their potential advantages for spatial resolution and device integration.

Findings

High transfer coefficient up to 1301 μV/Φ₀ observed.

Fast growth of nanoSQUIDs (~3 nm/s) using FIBID.

Potential for reduced active area and enhanced spatial resolution.

Abstract

NanoSQUIDs are quantum sensors that excel in detecting a small change in magnetic flux with high sensitivity and high spatial resolution. Here, we employ resist-free direct-write Ga+ Focused Ion Beam Induced Deposition (FIBID) techniques to grow W-C nanoSQUIDs, and we investigate their electrical response to changes in the magnetic flux. Remarkably, FIBID allows the fast ($3~\mathrm{nm}$) growth of $700~\mathrm{nm}\times 300~\mathrm{nm}$ Dayem-bridge nanoSQUIDs based on narrow nanowires ($50~\mathrm{nm}$ wide) that act as Josephson junctions. The observed transfer coefficient (output voltage to magnetic flux change) is very high (up to $1301~\mathrm{\mu V/\Phi_0}$), which correlates with the high resistivity of W-C in the normal state. We discuss here the potential of this approach to reduce the active area of the nanoSQUIDs to gain spatial resolution as well as their integration on cantilevers for scanning-SQUID applications.