Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels
Hyeon Han, Quentin Jacquet, Zhen Jiang, Farheen N. Sayed, Arpit, Sharma, Aaron M. Schankler, Arvin Kakekhani, Holger L. Meyerheim, Jae-Chun, Jeon, Jucheol Park, Sang Yeol Nam, Kent J. Griffith, Laura Simonelli, Andrew, M. Rappe, Clare P. Grey, Stuart S. P. Parkin

TL;DR
This study reports the epitaxial growth of single-crystalline T-Nb2O5 thin films with vertical ionic channels, enabling fast Li-ion transport and a colossal insulator-metal transition, revealing new phase transitions and electronic properties.
Contribution
It demonstrates the first successful growth of single-crystalline T-Nb2O5 thin films with vertical ionic channels and explores their electronic and phase transition behaviors.
Findings
Vertical ionic channels enable fast Li-ion migration.
Resistivity drops by eleven orders of magnitude during insulator-metal transition.
Multiple reversible phase transitions observed with distinct electronic structures.
Abstract
The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers with very low steric hindrance allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, likely due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-Nb2O5 thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration which we show gives rise to a colossal insulator-metal transition where the resistivity drops by eleven orders of magnitude due…
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Taxonomy
TopicsSemiconductor materials and devices · Microwave Dielectric Ceramics Synthesis
