Hall coefficient in amorphous alloys: critical behavior and quantitative test of quantum corrections due to weak localization and electron-electron interactions
A. Rogachev, H. Ikuta, and U. Mizutani

TL;DR
This study investigates the critical behavior of the Hall coefficient in amorphous Ti-Si alloys near a critical concentration, testing quantum correction theories and revealing the dominance of electron-phonon scattering and deviations in electron-electron interactions.
Contribution
It provides the first comprehensive experimental validation of quantum correction theories for Hall effect and conductivity in amorphous alloys, especially near critical concentrations.
Findings
Hall coefficient diverges at critical concentration, showing critical behavior.
Weak localization correction dominated by electron-phonon scattering with T^2 dependence.
EEI theory matches experiments in free-electron-like alloys, deviations explained by electron screening weakening.
Abstract
Here, we present the measurements of in a series of amorphous reaching the critical concentration, . For , the Hall coefficient displays the behavior predicted by the perturbation theory, , which extends up to the temperature 150 K. The temperature dependence gets stronger in alloys with lower ; diverges at displaying critical behavior. We used the combined conductivity and Hall coefficient data for alloys with high Ti content to test the theories of quantum corrections to conductivity. We found that the correction due to weak localization is dominated by the electron-phonon scattering with the rate varying with temperature as . The extracted parameter is in good agreement with the theory that considers the incomplete…
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Taxonomy
TopicsSurface and Thin Film Phenomena · Theoretical and Computational Physics · Chemical and Physical Properties of Materials
