Indirect Mechanism of Au adatom Diffusion on the Si(100) Surface

TL;DR

This study reveals an indirect diffusion mechanism for Au adatoms on Si(100), involving promotion to higher energy sites and fast migration along dimer rows, with implications for understanding surface diffusion at various temperatures.

Contribution

It introduces a novel indirect diffusion pathway for Au adatoms on Si(100), differing from the traditional direct path, and quantifies its energy barriers through computational methods.

Findings

Indirect mechanism has lower effective activation energy (0.56 eV) than direct (0.84 eV).

Adatoms visit about a hundred sites along the dimer row at room temperature.

The mechanism becomes more dominant at lower temperatures.

Abstract

Calculations of the diffusion of a Au adatom on the dimer reconstructed Si(100)-2x1 surface reveal an interesting mechanism that differs significantly from a direct path between optimal binding sites, which are located in between dimer rows. Instead, the active diffusion mechanism involves promotion of the adatom to higher energy sites on top of a dimer row and then fast migration along the row, visiting ca. a hundred sites at room temperature, before falling back down into an optimal binding site. This top-of-row mechanism becomes more important the lower the temperature is. The calculations are carried out by finding minimum energy paths on the energy surface obtained from density functional theory within the PBEsol functional approximation followed by kinetic Monte Carlo simulations of the diffusion over a range of temperature from 200 K to 900 K. While the activation energy for the direct diffusion mechanism is calculated to be 0.84 eV, the effective activation energy for the indirect mechanism is on average 0.56 eV.