High-resolution absorption measurements with free-electron lasers using ghost spectroscopy
Yishai Klein, Edward Strizhevsky, Flavio Capotondi, Dario De Angelis,, Luca Giannessi, Matteo Pancaldi, Emanuele Pedersoli, Giuseppe Penco, Kevin C., Prince, Or Sefi, Young Yong Kim, Ivan A. Vartanyants, and Sharon Shwartz

TL;DR
This paper introduces a robust ghost spectroscopy method for high-resolution x-ray and EUV absorption measurements at free-electron laser sources, enabling faster and more precise spectral analysis of materials.
Contribution
The study presents a novel ghost spectroscopy technique that achieves higher resolution and shorter measurement times than traditional narrow-band scanning methods at free-electron lasers.
Findings
Ghost spectroscopy reconstructs spectral response with high resolution.
Measurement time is shorter than narrow-band scanning under certain conditions.
Method is effective for materials like silicon and silicon compounds.
Abstract
We demonstrate a simple and robust high-resolution ghost spectroscopy approach for x-ray and extreme ultraviolet absorption spectroscopy at free-electron laser sources. Our approach requires an on-line spectrometer before the sample and a downstream bucket detector. We use this method to measure the absorption spectrum of silicon, silicon carbide and silicon nitride membranes in the vicinity of the silicon L2,3-edge. We show that ghost spectroscopy allows the high-resolution reconstruction of the sample spectral response using a coarse energy scan with self-amplified spontaneous emission radiation. For the conditions of our experiment the energy resolution of the ghost-spectroscopy reconstruction is higher than the energy resolution reached by scanning the energy range by narrow spectral bandwidth radiation produced by the seeded free-electron laser. When we set the photon energy…
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