TCAD Simulation and Design Optimization of Radiation Hard n-MCz and n-Fz Si Microstrip Detector for the HL-LHC

TL;DR

This paper uses TCAD simulations to optimize radiation-hard n-MCz and n-Fz silicon microstrip detectors for the HL-LHC, focusing on maximizing charge collection efficiency under radiation damage.

Contribution

It presents a detailed simulation and optimization study of n-MCz and n-Fz silicon microstrip detectors for high radiation environments in the HL-LHC.

Findings

Optimized detector designs with high charge collection efficiency.

Comparison of radiation damage effects in n-MCz and n-Fz Si detectors.

Enhanced understanding of charge collection behavior post-irradiation.

Abstract

A radiation hard Si detector is used in the new CMS tracker detector at HL-LHC. It has been observed that n-MCz and n-Fz Si as a material can be used for the Si micro strip detector. The detector design for this material should be simulated and optimized to get high CCE. In order to understand the charge collection behavior of the n-MCz/n-FzSi detector, it is required to simulate and compare the radiation damage effects in the mixed irradiated n-MCz Si and neutron irradiated n-FzSi micro strip detector equipped with metal overhang and multiple guard rings. In this paper, we have done analysis and optimization of the radiation hard n-MCz Si/n-Fz Si strip detector design for the HL-LHC experiment in order to get high CCE.