Investigation of Mixed Irradiation Effects in p-MCz Thin Silicon Microstrip Detector for the HL-LHC Experiments

TL;DR

This study develops a novel mixed irradiation damage model for p-MCz silicon microstrip detectors, validated against experimental data, to predict their behavior under HL-LHC radiation conditions.

Contribution

It introduces an advanced four-level deep-trap mixed irradiation model for p-MCz Si detectors, comparing experimental data with SRH theory to understand radiation effects.

Findings

Good agreement between experimental and SRH model results.

Model accurately predicts full depletion voltage and leakage current under mixed irradiation.

Extrapolation of detector performance at higher fluences is demonstrated.

Abstract

A lot of R & D work is carried out in the CERN RD50 Collaboration to find out the best material for the Si detectors that can be used in the harsh radiation environment of HL-LHC, n and p-MCz Si was identified as one of the prime candidates as a material for strip detector that can be chosen the phase 2 upgrade plan of the new Compact Muon Solenoid tracker detector in 2026. For the very first time, in this work, an advanced four level deep-trap mixed irradiation model for p-MCz Si is proposed by the comparison of experimental data on the full depletion voltage and leakage current to the Shockley Read Hall recombination statistics results on the mixed irradiated p-MCz Si PAD detector. In this work, we have determined the effective introduction rate {\eta}eff of shallower donor deep trap E30 K using SRH theory calculations for exp. Neff and that can shown the behavior of space charges and electric field distribution in the p-MCz Si strip detector and compared its value with the Neff of shallower donor deep trap E30 K in the n -MCz Si microstrip detector. Prediction uncertainty in the p-MCz Si radiation damage mixed irradiation model considered in the full depletion voltage and leakage current. A very good agreement is observed in the experimental and SRH results. This radiation damage models also used to extrapolate the value of the full depletion voltage at different mixed (proton + neutron) higher irradiation fluences for the thin p-MCz Si microstrip detector.