Hall effect in doped Mott insulator: DMFT-approximation

TL;DR

This paper uses DMFT to analyze the Hall effect in doped Mott insulators, revealing doping and temperature dependencies and aligning well with experimental data on cuprates.

Contribution

It provides a theoretical analysis of the Hall effect in doped Mott insulators using DMFT, highlighting doping-dependent sign change and temperature effects.

Findings

Hall coefficient changes sign at a critical doping level.

Hall number's doping dependence agrees with experiments.

Temperature significantly influences the Hall effect.

Abstract

In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence of Hall coefficient and Hall number on hole doping, determining the critical concentration for sign change of the Hall coefficient. Significant temperature dependence of Hall effect is noted. A good agreement is demonstrated with concentration dependence of Hall number obtained in experiments in the normal state of YBCO.