Ultra-Efficient Resistance Switching between Charge Ordered Phases in 1T-TaS$_2$ with a Single Picosecond Electrical Pulse

TL;DR

This paper demonstrates ultrafast, energy-efficient resistance switching in 1T-TaS$_2$ using a single 1.9 ps electrical pulse, advancing high-speed memory technology with precise optoelectronic measurement techniques.

Contribution

It introduces a novel optoelectronic circuit enabling measurement of intrinsic switching speeds, achieving non-volatile resistance switching with a single picosecond electrical pulse in 1T-TaS$_2$.

Findings

Resistance switching with a 1.9 ps electrical pulse.

Switching energy density of 9.4 fJ/μm².

Potential for cryogenic high-speed memory devices.

Abstract

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was previously reported with optical pulses, determination of the intrinsic speed limits of actual devices that are triggered by electrical pulses is technically challenging and hitherto still largely unexplored. A new optoelectronic laboratory-on-a-chip, designed for measurements of ultrafast memory switching, enables an accurate measurement of the electrical switching parameters with 100 fs temporal resolution. A photoconductive response is used for ultrashort electrical pulse generation, while its propagation along a coplanar transmission line is detected using electro-optical sampling using a purpose-grown highly-resistive electro-optic (Cd,Mn)Te crystal substrate. By combining the transmission line and the 1T-TaS$_2$ device in a single optoelectronic circuit a non-volatile resistance switching with a single 1.9 ps electrical pulse is demonstrated, with an extremely small switching energy density per unit area E$_A$ = 9.4 fJ/$\mu$m$^2$. The experiments demonstrate ultrafast, energy-efficient circuits utilizing switching between non-volatile charge-ordered states offers a new technological platform for cryogenic memory devices.