Dual function spin-wave logic gates based on electric field control magnetic anisotropy boundary

TL;DR

This paper proposes dual-function spin-wave logic gates controlled by electric fields in a Fe/BaTiO3 heterostructure, validated through micromagnetic simulations, offering a potential route to simplified integrated logic circuits.

Contribution

It introduces a novel dual-function spin-wave logic gate design utilizing electric field control of magnetic anisotropy boundaries, validated by simulations.

Findings

Validated AND-OR and NAND-NOR logic gates via micromagnetic simulations

Demonstrated electric field control of spin-wave propagation

Proposed a pathway for simplified integrated logic circuits

Abstract

Spin waves (SWs) have been considered a promising candidate for encoding information with lower power consumption. Here, we propose the dual function SW logic gates based on the electric field controlling the SW propagation in the Fe film of Fe/BaTiO3 heterostructure with the motion of magnetic anisotropy boundary (MAB). We show micromagnetic simulations to validate the AND-OR and NAND-NOR logic gates. Our research may find a path for simplifying integrated logic circuits using such dual function SW logic gates.