All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

TL;DR

This study investigates the spin and valley Hall effect in monolayer WSe2 transistors, demonstrating electrical control and temperature dependence up to 160 K, with implications for spintronics and valleytronics applications.

Contribution

It provides the first detailed electrical and temperature-dependent analysis of the SVHE in monolayer WSe2, including spin/valley lifetime estimates and polarization measurements.

Findings

SVHE persists up to 160 K

Electrical modulation of SVHE demonstrated

Spin/valley lifetime decreases with temperature

Abstract

Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with reflection spectra data is used to interpret the KR data and predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at 160 K. The excess spin and valley per unit length along the edge is calculated to be 109 per micron at 45 K, which corresponds to a spin/valley polarization on the edge of 6%. These results are important steps towards practical use of the SVHE.