Resonant Soft X-Ray Scattering on LaPt$_2$Si$_2$

TL;DR

This study combines X-ray absorption and RIXS spectroscopy with density functional theory to analyze the electronic structure of LaPt$_2$Si$_2$, revealing detailed insights into its local density of states and atomic excitations.

Contribution

It provides a comprehensive interpretation of LaPt$_2$Si$_2$ spectra using DFT, linking experimental data with theoretical electronic structure analysis.

Findings

Si spectra explained by Si s and d LPDOS

La spectra due to quasi-atomic 4f excitations

Pt d-LPDOS dominates occupied states

Abstract

X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPt$_2$Si$_2$ single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si $s$ and $d$ local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local $4f$ excitations. Calculations show that Pt $d$-LPDOS dominates the occupied states, and a sharp localized La $f$ state is found in the unoccupied states, in line with the observations.