A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Denys I. Miakota1, Raymond R. Unocic2, Fabian Bertoldo3, Ganesh, Ghimire1, Sara Engberg1, David Geohegan2, Kristian S. Thygesen3, and Stela, Canulescu1

TL;DR
This study introduces a simple method to grow high-quality tungsten disulfide crystals by controlling oxygen vacancies in precursors, enhancing growth efficiency, crystal quality, and understanding grain boundary formation.
Contribution
It demonstrates that tuning oxygen vacancies in tungsten oxide precursors facilitates WS2 growth and provides atomic-level insights into defect formation and grain boundary mechanisms.
Findings
Oxygen vacancies in precursors improve WS2 growth efficiency.
Enhanced photoluminescence and larger domain sizes in WS2.
Identification of defect types and grain boundary structures in WS2.
Abstract
Chemical vapor deposition (CVD) has been established as a versatile route for the large-scale synthesis of transition metal dichalcogenides, such as tungsten disulfide (WS2). Yet, the role of the precursor composition on the efficiency of the CVD process remains largely unknown and yet to be explored. Here, we employ Pulsed Laser Deposition (PLD) in a two-stage process to tune the oxygen content in tungsten oxide (WO3-x) precursors and demonstrate that the presence of oxygen vacancies in the precursor films leads to a more facile conversion from WO3-x to WS2. Using a joint study based on ab initio density functional theory (DFT) calculations and experiments, we unravel that the oxygen vacancies in WO3-x can serve as niches through which sulfur atoms enters the lattice and may facilitate an efficient growth of WS2 crystals. By solely modulating the precursor stoichiometry, the…
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Taxonomy
Topics2D Materials and Applications · Gas Sensing Nanomaterials and Sensors · ZnO doping and properties
