Gate-tunable kinetic inductance in proximitized nanowires

TL;DR

This paper demonstrates a method to tune the kinetic inductance of hybrid InAs/Al nanowires using gate voltage, enabling control over superconducting circuit properties for advanced electronics.

Contribution

It introduces a novel approach to measure and control nanowire inductance via gate voltage, expanding capabilities for superconducting device design.

Findings

Resonance frequency varies with gate voltage.

Extracted superconducting gap and conductivity dependence.

Provides a new tool for gate-controlled superconducting electronics.

Abstract

We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a new and useful tool for gate-controlled superconducting electronics.