High-performance and Low-power Transistors Based on Anisotropic Monolayer $\beta$-TeO$_2$

TL;DR

This paper investigates monolayer $eta$-TeO$_2$ as a promising 2D semiconductor for high-performance, low-power transistors, demonstrating its potential to meet future nanoelectronics device requirements.

Contribution

It provides a comprehensive analysis of the electronic structure and device performance of monolayer $eta$-TeO$_2$-based MOSFETs, highlighting their anisotropic transport properties and high current capabilities.

Findings

Monolayer $eta$-TeO$_2$ MOSFETs achieve ultra-high on-state currents exceeding 3700 μA/μm.

The anisotropic electronic structure enhances transport properties in specific directions.

Devices meet IRDS 2020 goals for high-performance and low-power applications.

Abstract

Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $\beta$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure of monolayer $\beta$-TeO$_2$ and the device performance of sub-10 nm metal oxide semiconductors FETs (MOSFETs) based on this material. The anisotropic electronic structure of monolayer $\beta$-TeO$_2$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultra-high on-state current exceeding 3700 {\mu}A/{\mu}m according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer $\beta$-TeO$_2$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, sub-threshold swing, delay time, and power-delay product. This study unveils monolayer $\beta$-TeO$_2$ as a promising candidate for ultra-scaled devices in future nanoelectronics.