PIC Simulations of One-side Multipactor on Dielectric
Gennady V. Romanov (Fermilab)

TL;DR
This paper uses particle-in-cell simulations to analyze the development of one-side multipactor discharges on dielectric surfaces, revealing key relationships between secondary emission, RF parameters, and discharge dynamics.
Contribution
It provides a comprehensive self-consistent PIC simulation framework to study multipactor phenomena on dielectric surfaces, highlighting correlations with secondary emission and RF field parameters.
Findings
Identified key correlations between multipactor saturation parameters and secondary emission properties.
Demonstrated the influence of RF field parameters on multipactor development.
Enhanced understanding of dielectric breakdown mechanisms in RF windows.
Abstract
Breakdown of dielectric RF windows is an important issue for particle accelerators and high-power RF sources. One of the generally considered reasons for the RF windows failure is the multipactor on dielectric surface. The multipactor may be responsible for excessive heating of dielectric and discharge of charges that accumulated in ceramic due to secondary emission. In this study the comprehensive self-consistent PIC simulations with space charge effect were performed in order to better understand the dynamic of one-side multipactor development and floating potential on dielectric induced by the emission. The important correlations between the multipactor parameters at saturation and the secondary emission properties of dielectric and the applied RF field parameters were found and are reported in the paper.
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