Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

TL;DR

This paper introduces a versatile thermal release tape-assisted transfer process for embedding semiconductor membranes with quantum emitters onto various substrates, significantly enhancing quantum light extraction efficiency for hybrid photonic devices.

Contribution

The authors develop a novel, adaptable transfer printing technique for semiconductor membranes containing quantum dots, enabling integration onto diverse host materials without compatibility constraints.

Findings

Achieved transfer of 190 nm GaAs membranes with InAs quantum dots onto gold substrates.

Enhanced quantum light extraction efficiency, exceeding 8 x 10^5 photons/sec from a single quantum dot.

Demonstrated the method's versatility for creating hybrid quantum and nano-photonic devices.

Abstract

Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$\mu$m x 80$\mu$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.