Expansion of Graphene-Based Device Technology for Resistance Metrology
Albert F. Rigosi

TL;DR
This paper discusses advancements in graphene-based quantum Hall resistance devices, focusing on expanding their operational parameters beyond the standard $ u=2$ plateau for improved resistance metrology standards.
Contribution
It explores the potential of using higher Landau levels in graphene for resistance standards, addressing challenges in precision compared to the $ u=2$ plateau.
Findings
EG-based QHR devices established as national standards
Higher Landau levels in graphene currently lack the precision of the $ u=2$ plateau
Research directions include increasing the parameter space for resistance standards
Abstract
The field of Quantum Hall metrology had a strong start with the implemntation of GaAs-based devices, given that 2D materials systems provided access to interesting quantum phenomena, including the infrastructure associated with making relevant measurements. With the technology laid out, further improvements in both infrastructure and standards were achieved in the previous two decades as EG-based quantized Hall resistance (QHR) devices became established as national standards. Since the metrology community has reached some understanding that a comparison against GaAs-based QHR devices had been accomplished, the next steps became clearer as far as how the EG-based QHR with a single Hall bar could be further developed. Since the early 90s, it has been of modest interest that QHR devices have a means of interconnecting several single Hall bar elements and has since been a subject of…
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Taxonomy
TopicsMagnetic Field Sensors Techniques · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
