Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

TL;DR

This paper demonstrates the integration of silicon vacancy defects into silicon carbide microresonators, achieving optical superradiance and advancing scalable quantum photonic networks.

Contribution

It reports the first integration of near-transform-limited V$_{ ext{Si}}$ defects into CMOS-compatible microdisk resonators with observed superradiance.

Findings

Achieved a single-emitter cooperativity of up to 0.8.

Observed optical superradiance from a pair of coupled color centers.

Analyzed multimode interference effects on photon scattering.

Abstract

An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Here, we report on the integration of near-transform-limited silicon vacancy (V$_{\text{Si}}$) defects into microdisk resonators fabricated in a CMOS-compatible 4H-Silicon Carbide-on-Insulator platform. We demonstrate a single-emitter cooperativity of up to 0.8 as well as optical superradiance from a pair of color centers coupled to the same cavity mode. We investigate the effect of multimode interference on the photon scattering dynamics from this multi-emitter cavity quantum electrodynamics system. These results are crucial for the development of quantum networks in silicon carbide and bridge the classical-quantum photonics gap by uniting optically-coherent spin defects with wafer-scalable, state-of-the-art photonics.