Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

TL;DR

This paper presents a novel isotype heterojunction photodetector using ZnO and silicon that offers wavelength selectivity and polarity-controlled detection, enabling broadband and self-powered operation with high photocurrent across UV to NIR.

Contribution

It introduces a new ZnO/Si heterojunction photodetector with tunable wavelength selectivity and polarity control, fabricated via atomic layer deposition and annealing, with demonstrated broadband and self-powered capabilities.

Findings

High optical quality of annealed ZnO on silicon.

Wavelength-dependent photocurrent polarity at zero bias.

Broadband operation with high photocurrent in UV to NIR range.

Abstract

An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by electric contact deposition and annealing. Photoluminescence measurements reveal high optical quality and improved crystallinity of annealed ZnO on silicon. Photocurrent measurements as a function of illumination wavelength and bias voltage show small negative values in the UV-visible spectral range at zero and positive bias voltage and high positive values in the NIR spectral range. For these measurements, we consider the electric contact to ZnO as the anode and the electric contact to silicon as the cathode. At negative bias voltage, the device shows broadband operation with high photocurrent values across the UV-vis-NIR.