Gate tunable anomalous Hall effect: a Berry curvature probe at oxides interfaces

TL;DR

This paper predicts a gate-tunable anomalous Hall effect in oxide interfaces, serving as a probe for Berry curvature, with potential for experimental reconstruction in SrTiO3 heterostructures.

Contribution

It introduces a theoretical model linking gate-tunable AHE to Berry curvature in non-magnetic oxide interfaces, highlighting a new experimental approach.

Findings

A gate-tunable AHE is predicted at oxide interfaces.

The AHE arises from a multiband Rashba model with spin textures.

Strategies for reconstructing Berry curvature from AHE are discussed.

Abstract

The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in a non magnetic oxide interface as a hallmark of a non-trivial Berry curvature. The observed AHE at low-temperatures in the presence of a planar magnetic field comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We also discuss strategies for reconstructing the Berry curvature from the AHE non-linearities in (111) SrTiO$_3$ heterostructure interfaces.