Two-dimensional ferroelectricity induced by octahedral rotation distortion in perovskite oxides

TL;DR

This study demonstrates that two-dimensional ferroelectricity induced by octahedral rotation distortions is common in perovskite bilayers, with strain and substrate effects significantly influencing ferroelectric properties and switching mechanisms.

Contribution

The paper reveals that octahedral rotation distortions induce 2D ferroelectricity in perovskite bilayers and explores how strain and substrate interactions modulate ferroelectric behavior.

Findings

Perovskite tolerance factor predicts hybrid improper ferroelectricity.

Orthorhombic twin state offers lowest energy switching path.

Epitaxial strain tunes polarization and switching behavior.

Abstract

Two-dimensional (2D) ferroelectricity has attracted extensive attention since its discovery in the monolayers of van der Waals materials. Here we show that 2D ferroelectricity induced by octahedral rotation distortion is widely present in the perovskite bilayer system through first-principles calculations. The perovskite tolerance factor plays a crucial role in the lattice dynamics and ground-state structure of the perovskite monolayers and bilayers, thus providing an important indicator for screening this hybrid improper ferroelectricity. Generally, the ferroelectric switching via an orthorhombic twin state has the lowest energy barrier. Epitaxial strain can effectively tune the ferroelectric polarization and ferroelectric switching by changing the amplitude of octahedral rotation and tilt distortion. The increasing compressive strain causes a polar to nonpolar phase transition by suppressing the tilt distortion. The cooperative effect of octahedral distortion at the interface with the substrate can reduce the energy barrier of the reversing rotation mode and can even change the lowest-energy ferroelectric switching path.