3-D Ti/TiN Interface
Prince Gollapalli, Varalakshmi Jalligampala, Kishor Peddapuvvala,, Prajeet Oza, and Satyesh Kumar Yadav

TL;DR
This study uses first-principles DFT calculations to demonstrate that the Ti/TiN interface is thermodynamically more stable when chemically graded, leading to a 3-D interface with gradual property variation, contrary to the traditional sharp interface assumption.
Contribution
It reveals that N diffusion creates a thermodynamically favored 3-D chemically graded Ti/TiN interface, challenging the conventional view of an atomically sharp interface.
Findings
N diffusion from TiN to Ti is thermodynamically favorable up to 23%.
Gradual variation in mechanical properties across the interface was observed.
The driving-force for 3-D interface formation can be assessed using N vacancy and interstitial formation energies.
Abstract
Interface by definition is two-dimensional (2-D) as it separates 2 phases with an abrupt change in structure and chemistry across the interface. The interface between a metal and its nitride is expected to be atomically sharp, as chemical gradation would require the creation of N vacancies in nitrides and N interstitials in metal. Contrary to this belief, using first-principles density functional theory (DFT), we establish that the chemically graded Ti/TiN interface is thermodynamically preferred over the sharp interface. DFT calculated N vacancy formation energy in TiN is 2.4 eV, and N interstitial in Ti is -3.8 eV. Thus, diffusion of N from TiN to Ti by the formation of N vacancy in TiN and N interstitial in Ti would reduce the internal energy of the Ti-TiN heterostructure. We show that diffusion of N is thermodynamically favorable till ~23% of N has diffused from TiN to Ti, resulting…
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Taxonomy
TopicsMetal and Thin Film Mechanics · Diamond and Carbon-based Materials Research · Semiconductor materials and devices
