A Magnetoelectric Memory Device Based on Pseudo-Magnetization

TL;DR

This paper introduces a novel magnetoelectric memory device that stores pseudo-magnetization, offering low-voltage switching and non-volatility, supported by theoretical modeling and experimental validation of key parameters.

Contribution

It proposes a new pseudo-magnetization-based memory device using PE/FM heterostructures, combining theoretical analysis with experimental validation of its key parameters.

Findings

Theoretical model predicts low-voltage switching energy and high retention.

Experimental FMR measurements validate the theoretical back-voltage values.

The device demonstrates feasibility for non-volatile memory applications.

Abstract

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures. Theoretically, we show how a PE/FM combination can lead to non-volatility in pseudo-magnetization exhibiting ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nanomagnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance (FMR) measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort.