Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films
Xuanyi Zhang, Aubrey N. Penn, Lena Wysocki, Zhan Zhang, Paul H. M. van, Loosdrecht, Lior Kornblum, James M. LeBeau, Ionela Lindfors-Vrejoiu, and, Divine P. Kumah

TL;DR
This study investigates how the atomic-scale structure of SrRuO$_3$ thin films varies with thickness and temperature, revealing strong dependencies that influence their magnetic and electronic properties, including the observation of the Invar effect in ultrathin layers.
Contribution
It provides detailed insights into the temperature and thickness dependence of structural distortions in SrRuO$_3$ films, highlighting their impact on magnetic properties and the presence of the Invar effect in ultrathin layers.
Findings
Oxygen octahedral tilts depend on temperature, thickness, and interface distance.
Invar effect observed below ferromagnetic transition in layers as thin as 8 unit cells.
Structural distortions influence magnetic and transport properties.
Abstract
Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the structure may deviate largely from that of the bulk. The temperature-dependent structure of 3 to 44 unit cell thick ferromagnetic SrRuO films grown on Nb-doped SrTiO substrates are investigated using a combination of high-resolution synchrotron X-ray diffraction and high-resolution electron…
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