Dynamical evolution of the Schottky barrier as a determinant contribution to electron-hole pair stabilization and photocatalysis of plasmon-induced hot carriers
Matias Berdakin, German Soldano, Franco P. Bonaf\'e, Varlamova Liubov,, B\'alint Aradi, Thomas Frauenheim, Cristi\'an G. S\'anchez

TL;DR
This paper investigates how the dynamic evolution of the Schottky barrier influences hot carrier stabilization and photocatalytic processes at the Au-TiO2 interface, revealing electronic contributions to charge separation and implications for energy conversion.
Contribution
It introduces a dynamic perspective on the Schottky barrier's role in hot carrier stabilization, emphasizing electronic effects without many-body interactions or environmental dissipation.
Findings
Electronic features stabilize electron-hole separation.
Dynamic Schottky barrier impedes charge back transfer.
Charge stabilization enables photocatalytic dissociation.
Abstract
The harnessing of plasmon-induced hot carriers promises to open new avenues for the development of clean energies and chemical catalysis. The extraction of carriers before thermalization and recombination is of primordial importance to obtain appealing conversion yields. Here, hot carrier injection in the paradigmatic Au-TiO system is studied by means of electronic and electron-ion dynamics. Our results show that pure electronic features (without considering many-body interactions or dissipation to the environment) contribute to the electron-hole separation stability. These results reveal the existence of a dynamic contribution to the interfacial potential barrier (Schottky barrier) that arises at the charge injection pace, impeding electronic back transfer. Furthermore, we show that this charge separation stabilization provides the time needed for the charge to leak to capping…
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