Oxygen Deficient {\alpha}-MoO3 with Promoted Adsorption and State-Quenching of H2O for Gas Sensor: A DFT Study
Changmeng Huan, Pu Wang, Binghan He, Yongqing Cai, Qingqing Ke

TL;DR
This DFT study reveals how oxygen vacancies in ultrathin alpha-MoO3 alter electronic properties and enhance water adsorption, improving its potential for sensors, optoelectronics, and photothermal applications.
Contribution
The paper demonstrates how oxygen vacancies in alpha-MoO3 modify electronic states and water adsorption behavior, offering new insights for sensor and optoelectronic device design.
Findings
Oxygen vacancies create in-gap states at ~0.59 eV below conduction band.
Water binding energy increases significantly at vacancy sites.
Adsorption of water quenches localized states, affecting electronic properties.
Abstract
Semiconducting oxides with reducible cations are ideal platforms for various functional applications in nanoelectronics and catalysts. Here we report an ultrathin monolayer alpha-MoO3 where tunable electronic properties and different gas adsorbing behaviors upon introducing the oxygen vacancies (VO). The unique property of alpha-MoO3 is that it contains three different types of oxygen atoms occupying three Wyckoff sites that are absent in other low-dimensional oxides and provides rich electronic hybridized states. The presence of VO triggers intermediate state in the gap at ~0.59 eV below the conduction band minimum and reduces the work function dramatically, together with new excitations at near infrared. The realigned Fermi level associated with the dangling state of VO reduces the neighboring Mo atoms and affects the gas adsorption thereafter. The binding energy of H2O molecules…
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