High throughput data-driven design of laser crystallized 2D MoS2 chemical sensors

TL;DR

This study demonstrates a high throughput, data-driven approach to design and analyze laser-crystallized 2D MoS2 chemical sensors, revealing key structure-property-performance relationships through extensive Raman spectroscopy data.

Contribution

The paper introduces a high throughput Raman spectroscopy method to analyze laser-crystallized MoS2, linking structural variations to sensor performance, which is a novel approach in 2D material device design.

Findings

Sensor performance depends on grain orientation.

Laser crystallization creates diverse structural regions.

Comprehensive data enables predictive design of sensors.

Abstract

High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including number of layers, lattice strain, carrier concentration, defect density, and grain structure. In this work, laser-crystallization was used to locally pattern and transform hundreds of regions of amorphous MoS2 thin films into 2D 2H-MoS2. A high throughput Raman spectroscopy approach was subsequently used to assess the process-dependent structural and compositional variations for each illuminated region, yielding over 5500 distinct non-resonant, resonant, and polarized Raman spectra. The rapid generation of a comprehensive library of structural and compositional data elucidated important trends between structure-property-processing relationships involving laser-crystallized MoS2, including the relationships between grain size, grain orientation, and intrinsic strain. Moreover, extensive analysis of structure/property relationships allowed for intelligent design, and evaluation of major contributions to, device performance in MoS2 chemical sensors. In particular, it is found that sensor performance is strongly dependent on the orientation of the MoS2 grains relative to the crystal plane.