High precision scalable power converter for accelerator magnets
Krister Leonart Haugen, Konstantinos Papastergiou, Panagiotis, Asimakopoulos, Dimosthenis Peftitsis

TL;DR
This paper presents a scalable, high-precision power converter using SiC MOSFETs designed for accelerator magnets, achieving 0.9ppm current accuracy without active filters.
Contribution
It introduces a novel scalable module-based converter design utilizing SiC MOSFETs for high-accuracy current supply to electromagnetic loads.
Findings
Achieved 0.9ppm current accuracy
Eliminated need for active filters
Demonstrated scalability of the converter design
Abstract
The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing Silicon insulated gate bipolar transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9ppm) supplying a 0.05H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design.
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Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Induction Heating and Inverter Technology · Advanced DC-DC Converters
