Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain

TL;DR

This paper introduces a semi-analytical method to estimate time constants of RTS noise in semiconductors, providing formulas and simulations to aid device noise analysis and trap characterization.

Contribution

It offers a new semi-analytical approach for estimating RTS noise parameters, including capture and emission constants, with detailed formulas and validation through simulations.

Findings

Closed-form expressions for variance estimators

Method to determine trap-related constants experimentally

Validation via Monte Carlo simulations

Abstract

We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We are sure to have an important tool to guide developers in building and analyzing low-frequency noise in semiconductor devices.