Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

TL;DR

This paper demonstrates that monolayer MoSi2N4 can serve as an excellent 2D semiconductor for transistors, showing promising performance comparable to other advanced materials, based on first principles simulations.

Contribution

The study provides first principles quantum transport simulation results for MoSi2N4 FETs, benchmarking their performance against silicon, carbon nanotubes, and other 2D materials.

Findings

MoSi2N4 FETs show high performance and competitiveness.

Devices meet IRDS 2020 roadmap targets for 2034.

Logic circuits based on MoSi2N4 are promising for future applications.

Abstract

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.