4.4 kV $\beta$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

TL;DR

This paper reports the development of $eta$-Ga$_2$O$_3$ lateral MESFETs with breakdown voltages exceeding 4.4 kV, achieving a lateral figure of merit over 100 MW/cm$^2$, surpassing silicon's theoretical limits.

Contribution

First demonstration of >4kV-class $eta$-Ga$_2$O$_3$ transistors with record high ON currents and low R$_{ON}$, surpassing silicon's theoretical FOM.

Findings

Achieved a breakdown voltage of 4.57 kV.

LFOM of 132 MW/cm$^2$ at ~4.4 kV.

Highest I$_{DMAX}$ and lowest R$_{ON}$ for V$_{BR}$ > 4kV devices.

Abstract

Field-plated (FP) depletion-mode MOVPE-grown $\beta$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $\mu$m exhibits an ON current (I$_{DMAX}$) of 56 mA/mm, a high I$_{ON}$/I$_{OFF}$ ratio $>$ 10$^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V$_{BR}$ recorded was 4.57 kV (L$_{GD}$ = 44.5 $\mu$m). An LFOM of 132 MW/cm$^2$ was calculated for a V$_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga$_2$O$_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I$_{DMAX}$ and lowest R$_{ON}$ values achieved simultaneously for any $\beta$-Ga$_2$O$_3$ device with V$_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V$_{BR}$), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $\beta$-Ga$_2$O$_3$ lateral transistors.