Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon

TL;DR

This paper experimentally investigates how high-energy positively charged particles scatter in bent monocrystalline silicon, revealing a significant reduction in scattering angles for channeled particles and energy-dependent effects.

Contribution

It provides new experimental evidence of reduced scattering angles for channeled particles and explores the energy dependence, challenging previous inverse proportionality assumptions.

Findings

Reduced rms scattering angle for channeled particles in silicon

Energy dependence of multiple scattering violates inverse proportionality

Improved measurement accuracy for non-channeled particles

Abstract

We present the results of an experimental study of multiple scattering of positively charged high energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.