Electrical and thermal transport in a twisted heterostructure of transition metal dichalcogenide and CrI$_3$ connected to a superconductor
Leyla Majidi, Reza Asgari

TL;DR
This study explores how twist angle and electric fields influence electric and thermal transport in a TMDC/CrI3 heterostructure connected to a superconductor, revealing tunable spin-valley polarized Andreev reflection and conductance.
Contribution
It demonstrates the control of spin-valley polarized Andreev reflection and conductance via twist angle, doping, and electric fields in TMDC/CrI3 heterostructures, highlighting new tunable transport phenomena.
Findings
Perfect spin valley polarized Andreev reflection over a wide bias range.
Higher thermal conductance in p-type doped structures.
Twist angle can suppress or enhance conductance depending on parameters.
Abstract
The broad tunability of the proximity exchange effect between transition-metal dichalcogenides (TMDCs) and chromium iodide (CrI) heterostructures offers intriguing possibilities for the use of TMDCs in two-dimensional magnetoelectrics. In this work, the influence of the twist angle and the gate electric field on the electric and thermal transport in a TMDC/CrI junction is investigated using the Dirac -Bogoliubov-de Gennes equation. We show that significant amounts can be controlled by spin-splitting of band structures due to spin-orbit interaction, and that the exchange-splitting of bands arises from the proximity effect. The property of the Andreev reflection (AR) process is highly dependent on the spin valley polarized states due to spin-orbit coupling. Remarkably, perfect spin valley polarized AR is possible over a wide bias range by using a gate voltage to tune the local…
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