Spin valve effect in two-dimensional VSe$_2$ system

TL;DR

This study investigates the spin valve effect in two-dimensional VSe$_2$, demonstrating potential for spintronics applications through electronic structure calculations and magnetoresistance analysis.

Contribution

The paper provides the first detailed electronic and spin transport analysis of VSe$_2$ in both phases, highlighting its potential as a spin valve material.

Findings

Significant spin-dependent magnetoresistance in VSe$_2$

Electronic structure characterized by DFT calculations

Potential application in spintronics and data storage

Abstract

Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve magnetoresistance may be achieved when magnetic moments of both atomic planes are driven to parallel alignment by an external magnetic field. The resistance change associated with the transition from antiparallel to the parallel configuration is qualitatively similar to that observed in artificially layered metallic magnetic structures. Detailed electronic structure of VSe$_2$ was obtained from DFT calculations. Then, the ballistic spin-valve magnetoresistance was determined within the Landauer formalism. In addition, we also analyze thermal and thermoelectric properties. Both phases of VSe$_2$, denoted as H and T, are considered.