Electrical transport properties of thick and thin Ta-doped SnO$_2$ films
Zong-Hui Gao, Zi-Xiao Wang, Dong-Yu Hou, Xin-Dian Liu, and Zhi-Qing Li

TL;DR
This study investigates the electrical transport properties of Ta-doped SnO$_2$ films, revealing complex scattering mechanisms and electron-electron interactions, especially in thin granular films, supported by experimental data and theoretical models.
Contribution
It provides new experimental evidence on electron-phonon-impurity interference and electron-electron interactions in granular metal films, validating theoretical predictions.
Findings
Thick films show combined electron-phonon and impurity scattering effects.
Thin films exhibit ln T behavior in conductivity and Hall coefficient.
Electron-electron interactions in granular structures explain low-temperature transport.
Abstract
Ta-doped SnO films with high conductivity and high optical transparency have been successfully fabricated using rf-sputtering method and their electrical transport properties have been investigated. All films reveal degenerate semiconductor (metal) characteristics in electrical transport properties. For the thick films ( with being the thickness) deposited in pure argon, the electron-phonon scattering alone cannot explain the temperature dependent behaviors of resistivity, the interference effect between electron-phonon and electron-impurity scattering should be considered. For the nm films, both conductivity and the Hall coefficient show linear relation with the logarithm of temperature () from 100 K down to liquid helium temperature. The behaviors of conductivity and Hall coefficient cannot be explained by the…
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